View 2SC1469_1415219.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

savantic semiconductor product specification silicon npn power transistors 2SC1469 d escription with to-3 package high breakdown voltage applications for high voltage ,fast switching applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i b base current 4 a p t total power dissipation t c - 25 100 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.25 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC1469 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 400 v v cesat collector-emitter saturation voltage i c =5a; i b =1a 1.0 v v besat base-emitter saturation voltage i c =5a; i b =1a 2.0 v i cbo collector cut-off current v cb =500v; i e =0 0.1 ma i ceo collector cut-off current v ce =400v; i b =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 15 50 h fe-2 dc current gain i c =5a ; v ce =5v 8 f t transition frequency i c =1a ; v ce =5v 10 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2SC1469 package outline fig.2 outline dimensions

▲Up To Search▲

Price & Availability of 2SC1469

	To Download 2SC1469 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .